| 朱阳,张祎,闫联生,崔红.多层沉积SiC涂层与石墨基体的界面表征[J].装备环境工程,2019,16(10):59-63. ZHU Yang,ZHANG Yi,YAN Lian-sheng,CUI Hong.Interface between Multi-layered CVD SiC Coating and Its Graphite Substrate[J].Equipment Environmental Engineering,2019,16(10):59-63. |
| 多层沉积SiC涂层与石墨基体的界面表征 |
| Interface between Multi-layered CVD SiC Coating and Its Graphite Substrate |
| 投稿时间：2019-05-30 修订日期：2019-06-14 |
| DOI：10.7643/issn.1672-9242.2019.10.010 |
| 中文关键词: 多层SiC涂层 界面 化学气相沉积 石墨纸 |
| 英文关键词:multi-layered SiC coating interface chemical vapor deposition graphite paper |
| 基金项目:国防基础科研项目(JCKY2017203C042)；国防科技创新特区项目(18H86303ZT00501601)；西安航天复合材料研究所预先研究项目(79999900049902) |
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| Author | Institution |
| ZHU Yang | School of Materials and Engineering, Northwestern Polytechnic University, Xi′an 710072, China |
| ZHANG Yi | Xi'an Aerospace Composites Research Institute, Xi′an 710025, China |
| YAN Lian-sheng | Xi'an Aerospace Composites Research Institute, Xi′an 710025, China |
| CUI Hong | School of Materials and Engineering, Northwestern Polytechnic University, Xi′an 710072, China;Xi'an Aerospace Composites Research Institute, Xi′an 710025, China |
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| 中文摘要: |
| 目的 制备并表征在柔性石墨纸基体上化学气相沉积(CVD)的多层SiC涂层，及其界面结构、界面处的元素分布等。方法 以柔性石墨纸为基体、甲基三氯硅烷(MTS)为硅源、H2为载气和还原剂、Ar为稀释气，在1030~1070 ℃温度区间通过真空感应高温炉在石墨基体上分5次制备了多层SiC涂层。通过SEM和EDS表征并分析该涂层的表面结构和切面结构，以及涂层与基体界面处的元素分布。结果 在石墨基体上有效制得了多层SiC涂层，获得的SiC涂层具有明显的两级颗粒结构。经EDS分析确认，在不同沉积层，C与Si的比例的不同。结论 实验证实SiC与基体石墨具有良好化学相容性。SiC涂层表面表观致密，纳米尺度堆积颗粒表观致密，但在微米尺度的堆积颗粒间存在空隙。多层涂层间具有1~3 μm的不致密SiC间隙。涂层一侧距界面10 μm处的元素分布显示，Si和C元素化学计量比趋近于1︰1，可以认为是涂层的过渡层。 |
| 英文摘要: |
| Objective To successfully fabricate the multi-layered SiC coating, which was chemical vapor deposited (CVD) on the graphite paper, and characterize its interface structure and element distribution. Methods The flexible graphite paper was selected as the substrate. With methyltrichlorosilane (MTS) as the silicone source, H2 as the carrier gas and the reductant, and Ar as the diluent gas, the CVD process was conducted under a temperature range of 1030-1070 ℃ to make multi-layer SiC deposited on the graphite substrate by 5 individual cycles in a high-temperature vacuum induction furnace. The coating was characterized and analyzed with SEM and EDS separately, which included the outer surface and the cross section of the coating morphology, and the element distribution at the interface between the coating and the substrate. Results CVD process could efficiently manufacture the multi-layered SiC coating and the SiC grains had two hierarchy structures. Beside this, it was also identified by the EDS that there were different atom ratios of C and Si at different coating layers. Conclusion It was again approved that the deposited SiC and the graphite substrate have favorable chemical compatibility. The SiC coating has dense appearance by naked eyes and at nano-scale, but has lots of voids at micro-scale. A loose SiC boundary with 1-3 μm in width is formed between two CVD layers. The element distribution of Si and C at the coating side within 10μm range shows that its stoichiometric ratio is approaching to 1:1, which could be concluded as the transition layer of the SiC coating. |
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