| 刘艳秋,张洪伟,于庆奎,石文坤,梅博,李鹏伟,周嵘,曹爽.宇航用硅基高压快恢复整流二极管单粒子烧毁效应研究[J].装备环境工程,2020,17(3):59-64. LIU Yan-qiu,ZHANG Hong-wei,YU Qing-kui,SHI Wen-kun,MEI Bo,LI Peng-wei,ZHOU Rong,CAO Shuang.Single Event Burnout Effect on Silicon-based High Voltage Fast Recovery Rectifier Diodes for Aerospace[J].Equipment Environmental Engineering,2020,17(3):59-64. |
| 宇航用硅基高压快恢复整流二极管单粒子烧毁效应研究 |
| Single Event Burnout Effect on Silicon-based High Voltage Fast Recovery Rectifier Diodes for Aerospace |
| 投稿时间：2019-07-25 修订日期：2019-08-28 |
| DOI：10.7643/issn.1672-9242.2020.03.010 |
| 中文关键词: 高压二极管 硅基二极管 单粒子效应 |
| 英文关键词:high voltage diodes silicon-based diodes single event effect. |
| 基金项目: |
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| Author | Institution |
| LIU Yan-qiu | China Academy of Space Technology, Beijing 100029, China |
| ZHANG Hong-wei | China Academy of Space Technology, Beijing 100029, China |
| YU Qing-kui | China Academy of Space Technology, Beijing 100029, China |
| SHI Wen-kun | China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang 550000, China |
| MEI Bo | China Academy of Space Technology, Beijing 100029, China |
| LI Peng-wei | China Academy of Space Technology, Beijing 100029, China |
| ZHOU Rong | China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang 550000, China |
| CAO Shuang | China Academy of Space Technology, Beijing 100029, China |
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| 中文摘要: |
| 目的 针对宇航用硅基高压快恢复整流二极管开展单粒子效应研究。方法 针对型号常用的各种工艺结构高压快恢复整流二极管系统，研究地面单粒子效应试验方法，包括粒子选择及注量率、单粒子效应检测系统、基于等效制样的单粒子效应试验样品匹配、试验流程，并选取三款典型器件进行单粒子评估试验，根据试验结果对硅基二极管单粒子烧毁失效的机理进行初步分析。结果 得出了三款典型器件在各偏置电压下抗单粒子烧毁的LET阈值。结论 形成了较为系统的高压二极管单粒子评估的试验方法，并可工程化应用。 |
| 英文摘要: |
| This paper aims to study the single event effect of silicon-based high voltage fast recovery rectifier diodes for aerospace applications. The ground single event test method was studied for the high voltage fast recovery rectifier diodes with various types of commonly used process structures, including ion selection and flux rate, single event effect detection system, sample matching based on equivalent sample preparation and test flow. Three typical devices were selected for single event evaluation test. The single event evaluation test was carried out for selected typical devices. The mechanism of single event burnout failure of silicon-based diodes was analyzed initially based on the test result. The single particle burned LET threshold of the three typical devices under different bias voltage resistance was obtained. Systematic test methods for singe event evaluation of high voltage diodes are developed and can be applied to engineering. |
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