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Optimization of Radiation-hardening Device for Spacecraft |
Received:June 14, 2017 Revised:November 15, 2017 |
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DOI:10.7643/ issn.1672-9242.2017.11.018 |
KeyWord:radiation-hardening device total ionizing dose effect single event effect |
Author | Institution |
WANG Yi-yuan |
Aerospace System Engineering Shanghai, Shanghai , China |
HAN Dong-mei |
Aerospace System Engineering Shanghai, Shanghai , China |
ZHAO Zhi-ming |
Aerospace System Engineering Shanghai, Shanghai , China |
LIU Zheng-yong |
Aerospace System Engineering Shanghai, Shanghai , China |
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Abstract: |
Objective Design of spacecraft has requirements on radiation resistance indexes of electronic components. With the increase of spacecraft design life, the components requires higher radiation resistant index, so it is needed to optimize the radiation resistance index for components, in order to reduce the limit of components due to insufficient radiation indicators. Methods Through comparative analysis on domestic and foreign systems of anti radiation indicators and date analysis of typical orbit and typical device, optimization method of total dose indicators were discussed. Factors affecting the rollover probability of orbit were analyzed. Typical data of single particle rollover probability was assessed. The limit of single LET threshold indicators was identified. Results There were methods and space for optimization of indexes for both total dose effect and single particle effect. Conclusion Through detailed analysis of the radiation environment and reduction of the radiation design margin, requirements on the total dose radiation index might be reduced. The requirement on LET threshold might be reduced in combination with the application requirement of single particle effect and protection design. |
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