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| Reliable Design and Analysis of High Power T/R Module Based on GaN Technology |
| Received:July 07, 2020 Revised:September 04, 2020 |
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| DOI：10.7643/issn.1672-9242.2020.12.018 |
| KeyWord:T/R module GaN MMIC high reliability circuit design thermal design |
| Author | Institution |
| PENG Xiang-fei |
No. 29 Research Institute of CETC, Chengdu , China |
| JIANG Hao |
No. 29 Research Institute of CETC, Chengdu , China |
| DENG Lin |
No. 29 Research Institute of CETC, Chengdu , China |
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| Abstract: |
| Combined with the working principle of T/R module, the key technologies affecting the reliability of high-power T/R module were designed and analyzed. Compared with the existing T/R module design circuit based on GaAs technology, the circuit design method of high power and high reliability T/R module based on GaN technology was described. |
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