Reliable Analysis and Design for Active Phased Array
Received:November 08, 2011  
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KeyWord:radar engineering  reliability  m-out-of-n model  GaN  active phased array
           
AuthorInstitution
DENG Lin No.29Research Institute of China Electronics Technology Group Corporation,Chengdu,China
DENG Ming No.29Research Institute of China Electronics Technology Group Corporation,Chengdu,China
ZHANG Cheng-wei No.29Research Institute of China Electronics Technology Group Corporation,Chengdu,China
HE Wen-bo Military Representative Office in No.29Research Institute,Chengdu,China
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Abstract:
      The reliability feature of active phased array was discussed based on its principle and technical features. The reliability feature of active phased array was compared and analyzed using m-out-of-n model and serial model in different complexity. The reliability design parameters of active phased array in m-out-of-n model were put forward. High reliability design of active phased array was prospected with example of GaN high-electron mobility transistors (HEMTs).
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