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Reliable Analysis and Design for Active Phased Array |
Received:November 08, 2011 |
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KeyWord:radar engineering reliability m-out-of-n model GaN active phased array |
Author | Institution |
DENG Lin |
No.29Research Institute of China Electronics Technology Group Corporation,Chengdu,China |
DENG Ming |
No.29Research Institute of China Electronics Technology Group Corporation,Chengdu,China |
ZHANG Cheng-wei |
No.29Research Institute of China Electronics Technology Group Corporation,Chengdu,China |
HE Wen-bo |
Military Representative Office in No.29Research Institute,Chengdu,China |
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Abstract: |
The reliability feature of active phased array was discussed based on its principle and technical features. The reliability feature of active phased array was compared and analyzed using m-out-of-n model and serial model in different complexity. The reliability design parameters of active phased array in m-out-of-n model were put forward. High reliability design of active phased array was prospected with example of GaN high-electron mobility transistors (HEMTs). |
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