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| Single Event Burnout Effect on Silicon-based High Voltage Fast Recovery Rectifier Diodes for Aerospace |
| Received:July 25, 2019 Revised:August 28, 2019 |
| View Full Text View/Add Comment Download reader |
| DOI：10.7643/issn.1672-9242.2020.03.010 |
| KeyWord:high voltage diodes silicon-based diodes single event effect. |
| Author | Institution |
| LIU Yan-qiu |
China Academy of Space Technology, Beijing , China |
| ZHANG Hong-wei |
China Academy of Space Technology, Beijing , China |
| YU Qing-kui |
China Academy of Space Technology, Beijing , China |
| SHI Wen-kun |
China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang , China |
| MEI Bo |
China Academy of Space Technology, Beijing , China |
| LI Peng-wei |
China Academy of Space Technology, Beijing , China |
| ZHOU Rong |
China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang , China |
| CAO Shuang |
China Academy of Space Technology, Beijing , China |
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| Abstract: |
| This paper aims to study the single event effect of silicon-based high voltage fast recovery rectifier diodes for aerospace applications. The ground single event test method was studied for the high voltage fast recovery rectifier diodes with various types of commonly used process structures, including ion selection and flux rate, single event effect detection system, sample matching based on equivalent sample preparation and test flow. Three typical devices were selected for single event evaluation test. The single event evaluation test was carried out for selected typical devices. The mechanism of single event burnout failure of silicon-based diodes was analyzed initially based on the test result. The single particle burned LET threshold of the three typical devices under different bias voltage resistance was obtained. Systematic test methods for singe event evaluation of high voltage diodes are developed and can be applied to engineering. |
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