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| Influence of Hydrothermal Reaction Time on the Absorber Performance of Zinc Oxide Semiconductor Materials |
| Received:October 27, 2020 Revised:November 09, 2020 |
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| DOI：10.7643/issn.1672-9242.2021.02.012 |
| KeyWord:ZnO hydrothermal method reaction time dielectric properties electromagnetic wave absorption capacity loss mechanism |
| Author | Institution |
| LIANG Yi |
National Key Laboratory for Remanufacturing, Army Academy of Armored Forces, Beijing , China |
| HUANG Wei |
A Department of Strategic Support Force, Xiamen , China |
| YUAN Yue |
National Key Laboratory for Remanufacturing, Army Academy of Armored Forces, Beijing , China |
| WEI Shi-cheng |
National Key Laboratory for Remanufacturing, Army Academy of Armored Forces, Beijing , China |
| HE Xue |
A Department of Strategic Support Force, Xiamen , China |
| JIANG Jiao |
A Department of Strategic Support Force, Xiamen , China |
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| Abstract: |
| The work aims to study the effect of hydrothermal reaction time on microwave absorber performance of ZnO. The ZnO semiconductor materials of different morphologies are prepared by controlling the hydrothermal reaction time, and they are characterized by XRD, SEM and TEM methods in order to evaluate the effects of hydrothermal reaction time on the morphology and structure of ZnO semiconductor materials. The relative complex permittivity and complex permeability of the material in the frequency range of 2~18 GHz are measured by vector network analyzer. The effects of hydrothermal reaction time on absorbing mechanism and microwave absorber performance of ZnO semiconductor materials under different thickness are simulated by MATLAB. The results show that when the hydrothermal reaction time is 12 h, ZnO has better microwave absorber performance at high frequencies, and the maximum return loss is up to ‒52.86 dB.By controlling the hydrothermal reaction time, the morphology of ZnO can be controlled, and the excellent absorber performance of ZnO can be obtained. |
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