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| Electromechanical Coupling Simulation and Optimization of Film Bulk Acoustic Resonators Regulated by Shaped Electrode |
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| DOI：10.7643/issn.1672-9242.2022.06.000 |
| KeyWord:film bulk acoustic wave resonator piezoelectric effect multi-field coupling finite element method frequency response spurious vibration |
| Author | Institution |
| ZHAN Xue-kui |
Institute of Systems Engineering, China Academy of Engineering Physics, Sichuan Mianyang , China |
| WAN Qiang |
Institute of Systems Engineering, China Academy of Engineering Physics, Sichuan Mianyang , China |
| LING Ming-xiang |
Institute of Systems Engineering, China Academy of Engineering Physics, Sichuan Mianyang , China |
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| Abstract: |
| The paper aims to suppress the parasitic vibration mode interference of the piezoelectric film bulk acoustic resonator (FBAR), propose a new structure of FBAR regulated by shaped electrode, and carry out the finite element modeling analysis and parameter optimization of the mechanical-electrical multi-physical field coupling. Based on the coupled equation of the piezoelectric film bulk acoustic resonator, the simulation analysis was carried out by employing the finite element method to obtain the impedance characteristics and the influence of parasitic vibration modal interference subjected to different electrode shapes and sensitive geometric parameters. Consequently, the optimal geometric parameters of the newly developed resonator were obtained. The finite element simulation results show that the proposed electrode shape provides smoother admittance curve, less phase ripple without obvious spurious resonance peak, the width of the frame electrode is 6 μm, the thickness is 0.1 μm, and the resonance frequency is 1.727 GHz.The shaped electrode can effectively suppress the spurious resonance and improve the performance of the resonator. |
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