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| Failure Mode and Mechanism of In-service Transistors in Damp Heat Test |
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| DOI：10.7643/issn.1672-9242.2023.02.015 |
| KeyWord:transistor damp heat test failure mode failure mechanism |
| Author | Institution |
| YAO Ke |
The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou , China |
| ZHENG Nan-fei |
The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou , China |
| LUO Qin |
The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou , China |
| QIU Sen-bao |
The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou , China |
| ZOU Qi-feng |
The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou , China |
| LI Kun-lan |
The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou , China |
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| Abstract: |
| The work aims to study the failure mode and failure mechanism of in-service transistors in damp heat test, and to propose improvement suggestions for reducing transistor failures. Three types of in-service transistors stored for more than 10 years without failure were selected for the damp heat test. The failure mode and failure mechanism of the transistors were studied by scanning electron microscope observation, electrical performance parameter testing, and ion chromatography analysis, etc. The results showed that 3.75% of transistors failed after 2 160 hours of damp heat test, including 2.50% of transistor lead breakage failure, and the failure mechanism was stress corrosion cracking; 1.25% of transistor parameters exceeded the standard. The failure mechanism was electric leakage caused by the adhesion ions contained in the back of the device or conformal coating. Damp heat test accelerates the failure of in-service transistors. The main failure modes are lead breakage due to stress corrosion cracking and parameter out-of-tolerance due to surface adhering ions. It is recommended to strengthen quality control during the lifetime of transistors, improve improper tube manufacturing process, reduce internal defects and residual stress, control the temperature, humidity and atmospheric composition of the storage environment, eliminate chloride ions and other adhering ions, and avoid the introduction of other reactive substances. |
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